منابع مشابه
The Erythropoietic Action of Germanium Dioxide
Injections were made of a sterile 0.4 per cent solution of germanium dioxide into four lots of mature male and female albino rats. Exact conditions of control were maintained. To two lots there was administered in four doses at intervals of 4 days a total of 6.6 mg. of the oxide per kilo of body weight. To two lots there was given in three doses at like intervals a total of 45 mg. of the compou...
متن کاملPressure Dependence of Liquid Vapor Pressure: An Improved Gibbs Prediction
A new model for the vapor phase of a pressurized liquid called "the cluster model: which is originally introduced in this work, along with an accurate equation of state for the liquid phase called the LIR, is used to derive an accurate equation for the vapor pressure of liquid as a function of external pressure. The chemical Potential of both phase have been found to be in good agreement wi...
متن کاملA New Vapor Pressure Equation
The Wagner equation for prediction of vapor pressure has been modified in order to improve it accuracy. On the basis of this modifications, development of a new equation for prediction of vapor pressure is outlined. Examples of the use of the equation for obtaining vapor pressure for a total of 94 pure substance are given. The proposed equation combines simplicity and accuracy and performs as w...
متن کاملDetermination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition
In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...
متن کاملKinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from Sill4 and GeH4
A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition from GeH~ and SiH~ assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the deposition kinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is 1 30 kJ m o l , lower compared to that of hydro...
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ژورنال
عنوان ژورنال: Bulletin of the Chemical Society of Japan
سال: 1957
ISSN: 0009-2673,1348-0634
DOI: 10.1246/bcsj.30.969